Gatemon Qubit Based on a Thin InAs-Al Hybrid Nanowire

We study a gate-tunable superconducting qubit (gatemon) based on thin InAs-Al hybrid nanowire. Using gate voltage to control its Josephson energy, the gatemon can reach strong coupling regime microwave cavity. In dispersive regime, we extract energy relaxation time T 1 ∼ 0.56 μs and dephasing T 2 * ∼ 0.38 μs. Since nanowires have fewer or single sub-band occupation recent transport experiment shows existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in using circuit quantum electrodynamics.